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IC

TO-252

SUD19P06-60-GE3

SUD19P06-60-GE3 is a VISHAY MOSFETs(MOSFET) in TO-252 package.

Brand

VISHAY

Package

TO-252

Lead Time

In stock

Date Code

Within 2 years

SUD19P06-60-GE3 Parameters

PackageTO-252
BrandVISHAY
Date CodeWithin 2 years
数量1个P沟道
导通电阻(RDS(on))77mΩ@4.5V
阈值电压(Vgs(th))3V
输入电容(Ciss)1.71nF
Operating Temperature-55℃~+150℃
OutputCapacitors(Coss)130pF
CategoryMOSFETs(MOSFET)
Stock48,024
MOQ / SPQ1 / 1
漏源电压(Vdss)60V
耗散功率(Pd)38.5W
栅极电荷量(Qg)40nC@10V
反向传输电容(Crss)90pF
类型P沟道

SUD19P06-60-GE3 Overview

场效应管(MOSFET) 2.3W; 38.5W 60V 18.3A 1个P沟道

SUD19P06-60-GE3 Procurement Checklist

For a SUD19P06-60-GE3 quotation, provide the full manufacturer part number, required quantity, acceptable date code and delivery destination. Confirm the package (TO-252) and electrical requirements against the manufacturer documentation before ordering. Listed stock, prices and lead time require final confirmation.

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