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SOT-23-3(TO-236)

SI2302CDS-T1-GE3

SI2302CDS-T1-GE3 is a VISHAY MOSFETs(MOSFET) in SOT-23-3(TO-236) package.

Brand

VISHAY

Package

SOT-23-3(TO-236)

Lead Time

In stock

Date Code

25+

SI2302CDS-T1-GE3 Parameters

PackageSOT-23-3(TO-236)
BrandVISHAY
Date Code25+
数量1个N沟道
导通电阻(RDS(on))75mΩ@2.5V
阈值电压(Vgs(th))850mV
Operating Temperature-55℃~+150℃
栅极电压(Vgs)±8V
CategoryMOSFETs(MOSFET)
Stock53,907
MOQ / SPQ1 / 1
漏源电压(Vdss)20V
耗散功率(Pd)550mW
栅极电荷量(Qg)3.5nC@10V, 4.5V
类型N沟道

SI2302CDS-T1-GE3 Overview

场效应管(MOSFET) 710mW 20V 2.9A 1个N沟道

SI2302CDS-T1-GE3 Procurement Checklist

For a SI2302CDS-T1-GE3 quotation, provide the full manufacturer part number, required quantity, acceptable date code and delivery destination. Confirm the package (SOT-23-3(TO-236)) and electrical requirements against the manufacturer documentation before ordering. Listed stock, prices and lead time require final confirmation.

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