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IC

PG-TO247-4

IMZA65R027M1H

IMZA65R027M1H is a Infineon Silicon CarbideMOSFETs(MOSFET) in PG-TO247-4 package.

Brand

Infineon

Package

PG-TO247-4

Lead Time

In stock

Date Code

25+

IMZA65R027M1H Parameters

PackagePG-TO247-4
BrandInfineon
Date Code25+
数量1个N沟道
漏源电压(Vdss)650V
阈值电压(Vgs(th))5.7V
输入电容(Ciss)2.131nF
Operating Temperature-55℃~+150℃
导通电阻(RDS(on))34mΩ
CategorySilicon CarbideMOSFETs(MOSFET)
Stock10
MOQ / SPQ1 / 1
类型N沟道
耗散功率(Pd)189W
栅极电荷量(Qg)63nC
反向传输电容(Crss)22pF
OutputCapacitors(Coss)317pF

IMZA65R027M1H Overview

碳化硅场效应管(MOSFET) IMZA65R027M1H TO-247-4

IMZA65R027M1H Procurement Checklist

For a IMZA65R027M1H quotation, provide the full manufacturer part number, required quantity, acceptable date code and delivery destination. Confirm the package (PG-TO247-4) and electrical requirements against the manufacturer documentation before ordering. Listed stock, prices and lead time require final confirmation.

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