Self-operatedListed stock
IC
TO-247-3
IMW120R350M1HXKSA1
The CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with
Brand
Infineon
Package
TO-247-3
Lead Time
In stock
Date Code
24+
IMW120R350M1HXKSA1 Parameters
| Package | TO-247-3 |
|---|---|
| Brand | Infineon |
| Date Code | 24+ |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 1.2kV |
| 阈值电压(Vgs(th)) | 5.7V |
| 输入电容(Ciss) | 182pF |
| Operating Temperature | -55℃~+175℃ |
| 导通电阻(RDS(on)) | 350mΩ |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 7 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 60W |
| 栅极电荷量(Qg) | 5.3nC |
| 反向传输电容(Crss) | 1pF |
| OutputCapacitors(Coss) | 10pF |
IMW120R350M1HXKSA1 Overview
The CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with
IMW120R350M1HXKSA1 Procurement Checklist
For a IMW120R350M1HXKSA1 quotation, provide the full manufacturer part number, required quantity, acceptable date code and delivery destination. Confirm the package (TO-247-3) and electrical requirements against the manufacturer documentation before ordering. Listed stock, prices and lead time require final confirmation.