TO-263-7
IMBF170R450M1XTMA1
CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Brand
Infineon
Package
TO-263-7
Lead Time
In stock
Date Code
23+
IMBF170R450M1XTMA1 Parameters
| Package | TO-263-7 |
|---|---|
| Brand | Infineon |
| Date Code | 23+ |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 1.7kV |
| 阈值电压(Vgs(th)) | 5.7V |
| 输入电容(Ciss) | 610pF |
| Operating Temperature | -55℃~+175℃ |
| 导通电阻(RDS(on)) | 450mΩ |
| Part Number | IMBF170R450M1XTMA1 |
| Unit | pcs |
| Product Weight | 0.00198 |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 10 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 107W |
| 栅极电荷量(Qg) | 11nC |
| 反向传输电容(Crss) | 1.7pF |
| OutputCapacitors(Coss) | 16pF |
| Product Name | 1个N沟道 耐压:1.7kV 电流:9.8A |
| Packaging | Tape & Reel |
| Product Type | Silicon CarbideMOSFETs(MOSFET) |
IMBF170R450M1XTMA1 Overview
CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
IMBF170R450M1XTMA1 Features
- 革命性的半导体材料——碳化硅
- 针对反激拓扑进行优化
- 12V/0V栅源电压， 与大多数反激控制器兼容
- 极低的开关损耗
- 基准栅极阈值电压， VGS(th) = 4.5V
- 完全可控的dV/dt， 用于电磁干扰优化
IMBF170R450M1XTMA1 Applications
- 能源发电
- 工业电源
- 基础设施
IMBF170R450M1XTMA1 Procurement Checklist
For a IMBF170R450M1XTMA1 quotation, provide the full manufacturer part number, required quantity, acceptable date code and delivery destination. Confirm the package (TO-263-7) and electrical requirements against the manufacturer documentation before ordering. Listed stock, prices and lead time require final confirmation.