Self-operatedListed stock
IC
TO-247-3
GC3M0120090D
GC3M0120090D is a SUPSiC Silicon CarbideMOSFETs(MOSFET) in TO-247-3 package.
Brand
SUPSiC
Package
TO-247-3
Lead Time
In stock
Date Code
Within 2 years
GC3M0120090D Parameters
| Package | TO-247-3 |
|---|---|
| Brand | SUPSiC |
| Date Code | Within 2 years |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 900V |
| 阈值电压(Vgs(th)) | 2.1V |
| 输入电容(Ciss) | 414pF |
| Operating Temperature | -55℃~+150℃ |
| 导通电阻(RDS(on)) | 120mΩ@15V |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 32 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 97W |
| 栅极电荷量(Qg) | 21nC |
| 反向传输电容(Crss) | 3pF |
| OutputCapacitors(Coss) | 48pF |
GC3M0120090D Overview
特性：高阻断电压， 低导通电阻。 高速开关， 低电容。 快速本征二极管， 低反向恢复（Qrr）。 无卤， 符合RoHS标准。 应用：可再生能源。 EV电池充电器
GC3M0120090D Procurement Checklist
For a GC3M0120090D quotation, provide the full manufacturer part number, required quantity, acceptable date code and delivery destination. Confirm the package (TO-247-3) and electrical requirements against the manufacturer documentation before ordering. Listed stock, prices and lead time require final confirmation.