Self-operatedListed stock
IC
TO247-3
GC3M0075120D
GC3M0075120D is a SUPSiC Silicon CarbideMOSFETs(MOSFET) in TO247-3 package.
Brand
SUPSiC
Package
TO247-3
Lead Time
In stock
Date Code
25+
GC3M0075120D Parameters
| Package | TO247-3 |
|---|---|
| Brand | SUPSiC |
| Date Code | 25+ |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 1.2kV |
| 阈值电压(Vgs(th)) | 2.5V |
| 输入电容(Ciss) | 1.39nF |
| Operating Temperature | -40℃~+175℃ |
| 导通电阻(RDS(on)) | 75mΩ@15V |
| Part Number | GC3M0075120D |
| Unit | pcs |
| Product Weight | 0.008134 |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 35 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 136W |
| 栅极电荷量(Qg) | 54nC |
| 反向传输电容(Crss) | 2pF |
| OutputCapacitors(Coss) | 58pF |
| Product Name | SUPSiC MOSFET Silicon CarbideMOSFETs |
| Packaging | Tube |
| Product Type | Silicon CarbideMOSFETs(MOSFET) |
GC3M0075120D Overview
特性：高阻断电压， 低导通电阻。 高速开关， 低电容。 快速本征二极管， 低反向恢复 (Qrr)。 无卤， 符合 RoHS 标准。 应用：可再生能源。 电动汽车电池充电器
GC3M0075120D Features
- 高阻断电压与低导通电阻
- 低电容实现高速开关
- 低反向恢复电荷的快恢复本征二极管
- 无卤素， 符合RoHS标准
GC3M0075120D Applications
- 可再生能源
- 电动汽车电池充电器
- 高压DC/DC转换器
- 开关模式电源
GC3M0075120D Procurement Checklist
For a GC3M0075120D quotation, provide the full manufacturer part number, required quantity, acceptable date code and delivery destination. Confirm the package (TO247-3) and electrical requirements against the manufacturer documentation before ordering. Listed stock, prices and lead time require final confirmation.