2N7002K-T1-GE3
Self-operatedAvailable
IC
SOT-23
2N7002K-T1-GE3
2N7002K-T1-GE3 is a VISHAY MOSFETs(MOSFET) in SOT-23 package.
Brand
VISHAY
Package
SOT-23
Lead Time
In stock
Date Code
Within 2 years
2N7002K-T1-GE3 Parameters
| Package | SOT-23 |
|---|---|
| Brand | VISHAY |
| Date Code | Within 2 years |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 2Ω@10V |
| 阈值电压(Vgs(th)) | 2.5V |
| 输入电容(Ciss) | 30pF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 6pF |
| Product Name | 1个N沟道 耐压:60V 电流:300mA |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 215,644 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 60V |
| 耗散功率(Pd) | 350mW |
| 栅极电荷量(Qg) | 600pC@10V |
| 反向传输电容(Crss) | 2.5pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | 2N7002K-T1-GE3 |
| Unit | pcs |
| Product Weight | 0.000165 |
2N7002K-T1-GE3 Overview
场效应管(MOSFET) 350mW 60V 300mA 1个N沟道
2N7002K-T1-GE3 Features
- 符合IEC 61249-2-21定义的无卤要求
- 低导通电阻:2 Ω
- 低阈值:2 V(典型值)
- 低输入电容:25 pF
- 快速开关速度:25 ns
- 低输入和输出泄漏电流
- TrenchFET功率MOSFET
- 2000 V静电放电保护
- 符合RoHS指令2002/95/EC
2N7002K-T1-GE3 Applications
- 直接逻辑电平接口:TTL/CMOS
- 驱动器:继电器、螺线管、灯、锤、显示器、存储器、晶体管等
- 电池供电系统
- 固态继电器